| PART |
Description |
Maker |
| NTE100 NTE101 |
Germanium Complementary Transistors Oscillator / Mixer for AM Radio / Medium Speed Switch
Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch
300 mA, 25 V, NPN, Ge, SMALL SIGNAL TRANSISTOR, TO5
|
NTE[NTE Electronics]
|
| NTE100PNP |
Germanium Complementary Transistors Oscillator / Mixer for AM Radio / Medium Speed Switch
|
NTE
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| 1N3110 1N949 1N3287 1N3287WUSN 1N3125 1N3146 1N994 |
8 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
6 V, 200 mA, gold bonded germanium diode
GOLD BONDED DIODES
6 V, 500 mA, gold bonded germanium diode
25 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
15 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
| 2N6488 2N6491 2N6487 2N6490 ON0097 |
15AMPERE COMPLEMENTARY
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| 1N3470 |
Germanium Diode
|
New Jersey Semi-Conductor Products, Inc.
|
| OA1154 |
GERMANIUM DIODE
|
BK
|
|
